計畫團隊成員 Members

 
 
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總計畫暨子計畫一
Main Project & Subproject 1

賴志煌  清華講座教授

國立清華大學材料系

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子計畫二
Subproject 2

曾院介  教授

國立交通大學材料系(所)

吳志毅-2

子計畫三
Subproject 3

吳志毅  教授

台積電-臺灣大學聯合研發中心

 
 

技術亮點 Technical Highlights


隨著人工智慧、物聯網裝置與更多的資料收集和感測需求,磁性記憶體的市場將迅速成長。利用電子自旋流取得了新一代MRAM(磁阻式隨機存取記憶體)的革命性突破,創造出讀寫速度更快、更省電、斷電時資訊也不流失的「不失憶記憶體」。MRAM目前最常見的結構為磁穿隧接面 (MTJ),其運作過程需要翻轉自由層來達到不同電阻。目前最常見的運作方式分別為:自旋轉移矩型(spin-transfer torque, STT)、自旋軌道矩型 (spin-orbit torque, SOT)以及電場控制型(voltage control magnetic anisotropy, VCMA)三種。本團隊針對MRAM三種運作機制,做系統性的研究並將效能優化。從材料結構選擇、單一元件製作、磁性元件分析,到電路與系統整合,深入整合MRAM的各項運作機制,並明確針對目前各式運作機制的挑戰,提供可能的解決方案,提升國內記憶體產業的影響力。

This project plans to deeply investigate the mechanisms of MRAM switching. For the short term, we will focus on STT-MRAM and select the optimized material system to solve the existing problems, for example, thermal stability of the free layer or resistance of the tunneling layer. For the long run, we will also work on SOT- and VCMA-MRAM and integrate various mechanisms together. We would like to develop the best combination to achieve low energy consumption and high performance nonvolatile MRAM. This project brings the researchers from universities, NDL, and ITRI together and we will develop the key IPs and technology. In addition, we will build up database for both academic and industries on MRAM knowledge.

 

應用情境 Applications


磁性記憶體(MRAM)具有非揮發性、無待機功耗、高讀寫次數上限及極快的存取速度等優點;使用在電腦上可使裝置快速啟動,即使電力意外中斷,元件的記憶狀態亦不會消失,若將其運用在手機上也能夠使手機在待機時間不會消耗能量,且能延長使用時間,同時進一步減小手機的尺寸;而相關自旋電子學的研究也被視為開拓後摩爾定律時代的元件發展的重要學門,具未來產業之前瞻性,對於低功耗的智慧晶片、感測器等領域都將扮演重要角色。

For the purpose of low-power consumption, intelligent, and novel sensing, spintronics-based MRAM definitely plays an important role. This proposal aims at integrating all the research resources regarding MRAM and encouraging the research group devoting to studying MRAM-correlated projects. An advanced platform for MRAM processing, analysis, and design will be developed.